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SGF40N60UFD
FEATURES
* High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) TO-3PF
CO-PAK IGBT
APPLICATIONS
* AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast
C
G E
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGES IC
Characteristics
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25C Collector Current @ Tc = 100C
Rating 600 20 40 20 160 15 160 96 38 -55 ~ 150 -55 ~ 150 300
Units V V A A A A A W W C C C
ICM (1) IF IFM PD
Pulsed Collector Current Diode Continuous Forward Current @ Tc = 100C Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25C Maximum Power Dissipation @Tc = 100C
Tj Tstg TL
Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. For Soldering Purposes, 1/8" from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
Rev.B
(c)1999 Fairchild Semiconductor Corporation
SGF40N60UFD
ELECTRICAL CHARACTERISTICS (IGBT PART)
(Tc=25C,Unless Otherwise Specified) Symbol
BVCES VCES/ TJ VGE(th) ICES IGES VCE(sat)
CO-PAK IGBT
Characteristics
C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage
Test Conditions
VGE = 0V , IC = 250uA VGE = 0V , IC = 1mA
Min
600 -
Typ Max
0.6 -
Units
V V/C
IC = 20mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Ic=20A, VGE = 15V Ic=40A, VGE = 15V VGE = 0V , f = 1MHz VCE = 30V
4.5 -
5.5 2.0 2.6 1430 168 50 12 20 68 50 0.08 0.19 0.27 92 21 28 14
7.5 250 100 2.6 100 100 0.47 138 31 42 -
V uA nA V V pF pF pF ns ns ns ns mJ mJ mJ nC nC nC nH
Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le
Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Turn on Switching Loss Turn off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance
VCC = 300V , IC = 20A VGE = 15V RG = 10 Inductive Load
-
Vcc = 300V VGE = 15V Ic = 20A Measured 5mm from PKG
-
SGF40N60UFD
ELECTRICAL CHARACTERISTICS (DIODE PART)
(Tc=25C,Unless Otherwise Specified) Symbol
VFM
CO-PAK IGBT
Characteristics
Diode Forward Voltage
Test Conditions
IF=15A Tc =25C Tc =100C
Min Min Typ
1.4 1.3 42 74 4.0 6.5 80 220
Max Units
1.7 60 6.0 180 nC A nS V
Trr
Diode Reverse Recovery Time
Tc =25C Tc =10 C IF=15A, VR=200V Tc =25C -di/dt=200A/uS Tc =10 C Tc =25C Tc =100C
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
THERMAL RESISTANCE
Symbol
RJC RJC RJA
Characteristics
Junction-to-Case (IGBT) Junction-to-Case (DIODE) Junction-to-Ambient
Min
-
Typ
-
Max
1.3 2.5 45
Units
C/W C/W C/W
SGF40N60UFD
32 Vcc = 300V Load Current : peak of square wave 200
CO-PAK IGBT
24
150 Tc = 25
Load Current [A]
16
Ic [A]
Tc = 100 100
8
50
Duty cycle : 50% Tc = 100 Power Dissipation = 32W 0 0.1 0 1 10 100 1000 0 2 4 6 8 10
Frequency [kHz]
Vce [V]
Fig.1 Typical Load Current vs. Frequency
Fig.2 Typical Output Characteristics
50 45 40
Vge = 15V
3.2
3.0 Ic = 48A 2.8
35
Max DC Current [A]
30
2.6
Vce(sat) [V]
25 20 15
2.4
2.2
Ic = 30A
2.0 10 5 0 25 50 75 1.8
1.6
Tc [
]
100
125
150
20
40
60
80
Tc [
] 100
120
140
Fig.3 Maximum Collector Current vs. Case Temperature
Fig.4 Collector to Emitter Voltage vs. Case Temperature
SGF40N60UFD
CO-PAK IGBT

7KHU PDO5HVSRQVH > KM =W F@

Pdm

t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + Tc
( (
VL H SXO QJO VH
(
5HFW DU3XO 'XU L > DQJXO VH DWRQ VHF@
Fig.5 Maximum Effective Transient Thermal Impedance, Junction to Case
2500
18 Vcc = 300V Ic = 20A 16
2000
14
12
Capacitance [pF]
1500
Cies
VGE [V]
1000 500 Coes Cres 0 1 10
10
8
6
4
2
0 0 20 40 60 80
Vce [V]
Qg [nC]
Fig.6 Typical Capacitance vs. Collector to Emitter Voltage
Fig.7 Typical Gate Charge vs. Gate to Emitter Voltage
SGF40N60UFD
1000 Vcc = 300V Ic = 20A Esw 2.0 Vcc = 300V Rg = 10 Vge = 15V 1.6
CO-PAK IGBT
800
Ic = 40A
Eon
Energy [uJ]
400 Eoff
Energy [mJ]
600
1.2
0.8
Ic = 20A 200 0.4 Ic = 10A
0 0 20 40
Rg [
+]
0.0 60 80 100 20 40
60
Tc [
]
80
100
Fig.8 Typical Switching Loss vs. Gate Resistance
1.6 Vcc = 300V Rg =10 Tc = 100
Fig.9 Typical Switching Loss vs. Case Temperature
1.4
Esw
1.2
100
1.0
Energy [mJ]
Eoff 0.8
0.6 Eon 0.4
Ic [A]
10
0.2
Safe Operating Area Vge = 20V, Tc = 100
1000
0.0 10 15 20 25 30 35 40
1 1 10 100
Ic [A]
Vce [V]
Fig.10 Typical Switching loss vs. Collector to Emitter Current
Fig.11 Turn-off SOA
SGF40N60UFD
100 100
CO-PAK IGBT
VR = 200V IF = 15A
80
Forward Current IF [A]
Tc = 100 10
Trr [ns]
Tc = 100
Tc = 25
60
Tc = 25
40
1 0.0
0.5
1.0
1.5
2.0
2.5
100
1000
Forward Voltage Drop V F [V]
-di/dt [A/us]
Fig.12 Typical Forward Voltage Drop vs. Forward Current
100 VR = 200V IF = 15A
Fig.13 Typical Reverse Recovery Time vs. di/dt
800 VR = 200V 700 IF = 15A
600
Tc = 100
500 Tc = 100
I rr - [A]
10
Qrr [ns]
Tc = 25
400
300
200 Tc = 25 100
1 100
-di/dt [A/us]
1000
0 100
1000
-di/dt [A/us]
Fig.14 Typical Reverse Recovery Current vs. di/dt
Fig.15 Typical Stored Charge vs. di/dt
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANAR TM MICROWIRETM POPTM PowerTrenchTM QSTM QuietSeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or (c) whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
LIFE SUPPORT POLICY Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notices in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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